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  r07ds0835ej0210 rev.2.10 page 1 of 6 jan 29, 2014 preliminary datasheet RJK4002DPD 400v - 3a - mos fet high speed power switching features ? low on-state resistance r ds(on) = 2.4 typ. (at i d = 1.5 a, v gs = 10 v, ta = 25 c) ? low drive current ? high speed switching outline renesas package code: prss0004zg-a ( package name : mp-3a) 1 1. gate 2. drain 3. source 4. drain 3 2 4 d s g absolute maximum ratings (ta = 25 c) item symbol value unit drain to source voltage v dss 400 v gate to source voltage v gss 30 v drain current i d 3 a drain peak current i d (pulse) note1 6 a body-drain diode reverse drain current i dr 3 a body-drain diode reverse drain peak current i dr (pulse) note1 6 a avalanche current i ap note2 2.5 a avalanche energy e ar note2 0.357 mj channel dissipation pch note3 30 w channel to case thermal impedance ch-c 4.17 c/w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pulse width limited by safe operating area. 2. stch = 25 c, tch 150 c 3. value at tc = 25 c r07ds0835ej0210 rev.2.10 jan 29, 2014
RJK4002DPD preliminary r07ds0835ej0210 rev.2.10 page 2 of 6 jan 29, 2014 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 400 ? ? v i d = 10 ma, v gs = 0 zero gate voltage drain current i dss ? ? 1 a v ds = 400 v, v gs = 0 gate to source leak current i gss ? ? 0.1 a v gs = 30 v, v ds = 0 gate to source cutoff voltage v gs(off) 3.5 ? 4.5 v v ds = 10 v, i d = 1 ma static drain to source on state resistance r ds(on) ? 2.4 2.9 i d = 1.5 a, v gs = 10 v note 4 input capacitance ciss ? 165 ? pf v ds = 25 v v gs = 0 f = 1 mhz output capacitance coss ? 25 ? pf reverse transfer capacitance crss ? 2.6 ? pf turn-on delay time t d(on) ? 11 ? ns i d = 1.5 a v gs = 10 v r l = 133 rg = 10 rise time t r ? 12 ? ns turn-off delay time t d(off) ? 23 ? ns fall time t f ? 20 ? ns total gate charge qg ? 6.0 ? nc v dd = 320 v v gs = 10 v i d = 3 a gate to source charge qgs ? 1.2 ? nc gate to drain charge qgd ? 3.4 ? nc body-drain diode forward voltage v df ? 0.9 1.5 v i f = 3 a, v gs = 0 note 4 body-drain diode reverse recovery time t rr ? 200 ? ns i f = 3 a, v gs = 0 di f /dt = 100 a/ s note: 4. pulse test 5. this device is sensitive to electrostatic discharge. it is recommended to adopt appropriate cautions when handling this product.
RJK4002DPD preliminary r07ds0835ej0210 rev.2.10 page 3 of 6 jan 29, 2014 main characteristics 5 4 3 2 1 0 048121620 drain to source voltage v ds (v) drain current i d (a) typical output characteristics gate to source voltage v gs (v) drain current i d (a) typical transfer characteristics 0.1 1 10 1 10 0.1 drain current i d (a) drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. drain current (typical) v gs = 10 v ta = 25 c pulse test ? 25 0 25 50 75 100 125 150 case temperature tc ( c) static drain to source on state resistance r ds(on) ( ) static drain to source on state resistance vs. temperature (typical) 02468 1 0.01 0.1 0.001 10 8 6 2 4 0 10 ta = 25 c pulse test 7 v 10 v 5.4 v 5.6 v 5.8 v 6 v 6.4 v 6.2 v 5.2 v v gs = 5 v i d = 3 a 0.1 1 10 1000 100 10 reverse drain current i dr (a) reverse recovery time t rr (ns) body-drain diode reverse recovery time (typical) v gs = 10 v ta = 25 c pulse test 1.5 a di / dt = 100 a / s v gs = 0, ta = 25 c v ds = 10 v pulse test tc = 75 c 25 c ? 25 c 10 1 110 1000 0.01 0.1 100 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area 100 0.001 0.1 tc = 25 c 1 shot pw = 100 s 10 s operation in this area is limited by r ds(on)
RJK4002DPD preliminary r07ds0835ej0210 rev.2.10 page 4 of 6 jan 29, 2014 800 0 16 600 12 400 8 200 0 4 246810 0 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics (typical) 0 0.4 0.8 1.2 1.6 2.0 5 2 source to drain voltage v sd (v) reverse drain current vs. source to drain voltage (typical) reverse drain current i dr (a) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 -25 0 50 100 150 25 125 75 case temperature tc ( c) gate to source cutoff voltage vs. case temperature (typical) gate to source cutoff voltage v gs(off) (v) v ds = 10 v 1 ma 0.1 ma 1 0 3 4 i d = 3 a ta = 25 c v ds v gs v dd = 100 v 200 v 320 v v dd = 320 v 200 v 100 v v gs = 0 ta = 25 c pulse test i d = 10 ma 040 160 120 80 200 1000 100 10 1 v gs = 0 f = 1 mhz tc = 25 c ciss coss crss capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage
RJK4002DPD preliminary r07ds0835ej0210 rev.2.10 page 5 of 6 jan 29, 2014 vin monitor d.u.t. vin 10 v r l v dd = 200 v t r t d(on) vin 90% 90% 10% 10% vout t d(off) vout monitor 10 90% 10% t f switching time test circuit waveform 10 100 1 m 10 m 100 m 1 100 10 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 4.17 c/w, tc = 25 c tc = 25 c d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1sh ot pulse pulse width pw (s) normalized transient thermal impedance s (t) normalized transient thermal impedance vs. pulse width 10 1 0.01 0.1
RJK4002DPD preliminary r07ds0835ej0210 rev.2.10 page 6 of 6 jan 29, 2014 package dimensions sc-63 0.32g mass[typ.] tmp3 prss0004zg-a renesas code jeita package code previous code unit: mm 10.4max 1max 0.5 0.2 0.1 0.1 0.5 0.2 0.76 0.76 0.2 2.3 0.2 5.3 0.2 6.6 1.4 0.2 6.1 0.2 1 0.2 2.3 2.5min 2.3 1 package name mp-3a ordering information orderable part number quan tity shipping container RJK4002DPD-00#j2 3000 pcs taping
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